July 23, 2024

Insulated Gate Bipolar Transistor And Super Junction Metal-Oxide-Semiconductor Field-Effect Transistor Market Driven By Development Of New Application Areas

Insulated Gate Bipolar Transistors (IGBTs) and Super Junction Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) are utilized as power semiconductor switches in a range of high power applications due to their ability to operate at high voltages in the range of 600V to 6,500V with lower conduction and switching losses. IGBTs are deployed predominantly in industrial motor drives, variable frequency drives (VFD), electric vehicles, and solar inverters where their ease of driving and capability to handle large currents make them suitable. Whereas, Super Junction MOSFETs are gaining prominence in applications requiring high switching speeds like DC-DC converters, on-board battery chargers and other power conversion equipments.

The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 12% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.

Market key trends:
IGBTs play a vital role in electric powertrains allowing for better energy recoverability and efficiency. Further, the adoption of Super Junction MOSFETs in on-board chargers is also surging owing to their fast switching capability. Additionally, the demand for solar inverters and energy efficient industrial equipment is prompting manufacturers to develop IGBT and MOSFET devices with lower conduction losses and faster switching frequencies. This is expected to open new growth avenues for players in the market over the forecast period.

Porter’s Analysis
Threat of new entrants: The threat of new entrants in the IGBT and Super Junction MOSFET Market is moderate due to the requirement of high initial capital investment and established brand names of existing players.
Bargaining power of buyers: The bargaining power of buyers is moderate due to the availability of substitutes. However, customized solutions provide switching advantage to buyers.
Bargaining power of suppliers: The bargaining power of suppliers is low due to the availability of substitute components and intensity of competition among existing players.
Threat of new substitutes: The threat of new substitutes is moderate as components such as SiC FETs and GaN FETs provide better switching performance compared to IGBTs and MOSFETs.
Competitive rivalry: The competitive rivalry in the market is high due to the presence of numerous global and regional players offering price-based competition.

Key Takeaways
The global IGBT And Super Junction MOSFET Market Size is expected to witness high growth. The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 12% over the forecast period 2023 to 2030.

Asia Pacific dominates the global market and is expected to grow at the fastest CAGR during the forecast period due to large scale adoption of renewable energy in countries such as China and India.

Key players operating in the IGBT and Super Junction MOSFET Market are Biogen Inc., AstraZeneca PLC, Pfizer Inc., Novartis International AG, Merck & Co., Inc., Sanofi S.A., F. Hoffmann-La Roche Ltd., Medtronic plc, Boston Scientific Corporation, Abbott Laboratories, Ceregene Inc., BioTime Inc., Stemedica Cell Technologies, Inc., Neuralstem, Inc., and StemCells Inc.

Note:
1. Source: Coherent Market Insights, Public sources, Desk research
2. We have leveraged AI tools to mine information and compile it